Functional Device Engineering Laboratory / Kyushu University

Publication

This page includes Japanese contents.

2025

Award

令和6年度総合理工学府賞森本敦己

令和6年度デバイス理工学メジャー賞麻生大聖、西崎理万

Papars, proceedings

2. High-Mobility p-Channel Thin-Film Transistors Based on Polycrystalline GeSn
Advanced Electronic Materials, available online
K. Moto, S. Maeda, K. Igura, L. Huang, A. Morimoto, K. Yamamoto, K. Toko LINK

1. Al₂O₃ growth on Ge by low-temperature (~90 ºC) atomic layer deposition and its application for MOS devices
Materials Science in Semiconductor Processing, Vol. 190, No. 5, 109372 (2025)
T. Aso, H. Kuwazuru, D. Wang, K. Yamamoto LINK

Conference presentations

Y. Feng, G. Kuroeda, K. Yamamoto, S. Sibayama, O. Nakatsuka, and D. Wang
Gesn Photodiodes with Metal-Interlayer-Semicoductor-metal Structure Fabricated at Ultra-Low Tenperature(200℃)
The 27th Cross Straits Symposium on Energy and Enviromental Science and Technology, 2025.12.10

G. Kuroeda, Y. Feng, K. Yamamoto, and D. Wang
Investigation of metal/Ge/TiOx/Metal Photodetectors with an Ultra-Thin Thermally Oxidized TiOx Layer for CMOS-Compatible Optoelectronic Integration
The 27th Cross Straits Symposium on Energy and Enviromental Science and Technology, 2025.12.10

北川翔太、黒枝元哉、馮亜軍、山本圭介、王冬
ソース／ドレイン接合にTiO₂薄膜を形成したGe n-MOSFETの作製と評価
2025年応用物理学会九州支部学術講演会, 2025.12.6

G. Kuroeda, Y. Feng, K. Yamamoto, and D. Wang
Fabrication and Characterization of Ge Photodetectors with a Metal/Ge/Ultra-Thin Oxide/Metal Structure for CMOS Compatible Optoelectronic Integration
16th International Workshop on New Group IV Semiconductor Nanoelectronics, 2025.11.18

H. Kuwazuru, D. Wang, and K. Yamamoto
Improvement of Electrical Properties and V_FB Control of SIO₂/GeO₂ Gate Stack in Low Temperature Process
16th International Workshop on New Group IV Semiconductor Nanoelectronics, 2025.11.18

Y. Feng, G. Kuroeda, K. Yamamoto, S. Sibayama, O. Nakatsuka, and D. Wang
Low-Temperature Fabrication of GeSn Photodiodes Featuring a Metal/Ultra-Thin Oxide/Semiconductor/Metal Structure
16th International Workshop on New Group IV Semiconductor Nanoelectronics, 2025.11.18

L. Huang, K. Igura, K. Toko, D. Wang, and K. Yamamoto
Study on Inverson Mode N-channel TFT on Polycrystalline Ge by Solid Phase Crystallization at Low Process Temperature
ISCSI-X & ICSI/ISTDM2025, 2025.11.13

G. Kuroeda, Y. Feng, K. Yamamoto, D. Wang
Fabrication and evaluation of asymmetric metal/Ge/matal diodes with Al/Ge/ultra-thin thermally oxidized TiO_x/Al structure
ISCSI-X & ICSI/ISTDM2025, 2025.11.12

R. Nishizaki, D. Wang, K. Yamamoto
Effect of Forming Gas Annealing for 3C-SiC n-MOSFET
IWDTF2025, 2025.11.6

Y. Feng, G. Kuroeda, K. Yamamoto, S. Sibayama, O. Nakatsuka, D. Wang
Fabrication and evaluation of GeSn photodiodes with metal-interlayer-semiconductor-metal structure for med at an ultra-low temperature(200℃)
IWDTF2025, 2025.11.6

H. Kuwazuru, D. Wang , and K. Yamamoto
Low Temperature PMA Effect on SiO₂/GeO₂Gate Stack for Improvement of Electrival Characteristics and its V_FB Controllability
IWDTF2025, 2025.11.6

D. Wang(invited), Y. Feng, G. Kuroeda, N. Shimizu, K. Yamamoto
Controlling effective Schottky barrier height by inserting various ultrathin insulators between aluminum and germanium
TACT 2025, 2025.10.26

O. Nakatsuka(invited), T. Maeda, D. Wang, K. Sueoka, T. Tanaka, Y. Noda, K. Yamamoto, S. Shibayama, M. Kurosawa, M. Sakashita
Material, Process, and Device Technologies of GeSn/GeSiSn Heterostructures for Optoelectronic Applications
248th ECS meeting, 2025.10.14

H. Kuwazuru, T. Aso , D. Wang , and K. Yamamoto
Low Temperature Annealing Effect on SiO₂/GeO₂Gate Stack on Ge
248th ECS meeting, 2025.10.14

K. Yamamoto(invited), T. Aso, H. Kuwazuru , and D. Wang
Gate Stack Fabrication on Germanium Using LowTemperature Atomic Layer Deposition
248th ECS meeting, 2025.10.14

L. Huang, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Electrical Characteristic Impact on Channel Shape of n-ChannelTFT on Solid-Phase Crystallized Polycrystalline-Ge
248th ECS meeting, 2025.10.13

黄林昱、居倉功汰、都甲薫、王冬、山本圭介
多結晶Ge TFTにおける粒界に沿ったキャリア伝導の考察
2025年第86回応用物理学会秋季学術講演会, 2025.9.8