Publication

This page includes Japanese contents.

2026

Papars, proceedings

3.    Control of Flatband Voltage via Ge Oxide-Involved Dipole Modulation in Low-Temperature Fabricated SiO2/GeO2/Ge Gate Stacks
ECS Journal of Solid State Science and Technology, accepted
H. Kuwazuru, D. Wang, K. Yamamoto LINK

2.   Impact of Channel Width on Electrical Characteristics for
Inversion Mode N-channel TFT on Polycrystalline Ge by Solid
Phase Crystallization
ECS Journal of Solid State Science and Technology, Vol. 15, No. 6, 064006 (2026)
L. Huang, K. Igura, D. Wang, K. Toko, K. Yamamoto LINK

1.   Demonstration of CMOS inverter on poly-crystalline Ge on glass
Materials Sciencein Semiconductor Processing, Vol. 207, No. 1, 110493 (2026)
A. Morimoto, L. Huang, K. Igura, T. Ishiyama, D. Wang, K. Toko, K. Yamamoto LINK

Conference presentations

Y. Feng, C.-Y. Kao, C.-C. Cheng, I. Radu, G.-L. Luo, K. Yamamoto, D. Wang
Fabrication and evaluation of Metal/n+-Ge Contacts with Extremely Low Contact Resistivity
2026 International Conference on Solid State Devices and Materials (SSDM2026), 2026.9.16

鍬釣 一、王 冬、山本 圭介
SiO2/GeO2/Geゲートスタックにおける低温PMA効果
2026年第87回応用物理学会秋季学術講演会, 2026.9.11

D. Wang(invited), N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Sibayama, and
O. Nakatsuka
Electrical Characterization of GeSn Films Fabricated by Molecular Beam Epitaxy
ISPlasma2026/IC-PLANTS2026, 2026.3.4